The first experiments on the microtechnology beamline 811 was produced on the end of January 1999.
Thick layers of PMMA were exposed to determine threshold power density for the polymer bubbling.
Also negative resist SAL was used for test exposures with thiknesses 2-10 µm.
A.L.Bogdanov, S.Peredkov "Use of SU-8 photoresist for very high aspect ratio lithography" ( pdf 1.6Mb)
A.L.Bogdanov, S.Peredkov "X-ray lithography station at MAX-Lab: First results" ( pdf 700Kb)
A.L.Bogdanov "Use of SU-8 negative photoresist for opticalmask manufacturing" ( pdf 2.78Mb)
O.Wilhelmi, S.Peredkov and A.Bogdanov "Concept, Constructing and Commissioning of an Alignment System for Deep X-Ray Lithography" ( Microsoft Power Point 952 kb)
SEM photos of 125 µm high and 8 µm diameter pillar of photoresist SU-8. Roughness of the pillar walls looks less than 0.2µm, and walls verticality is almost perfect.
SU-8 structures with through holes. The smallest halls are about 5µm wide. Resist thickness is 120µm. Photo tilt angle 45 deg.
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Fences 4µm thick and 120µm high. Material SU-8. Image tilt 45 deg.
SU-8 structures, resist thickness 360µm taken at 60 deg. tilt.
Lines are 20µm wide, spaces are 15µm: aspect ratio (AR) 20:1 (left)
(right) Structures width of the slit is 8µm (AR = 45:1)
SU-8 400 µm thick. Central cross edge width is 20 µm. Slit width is 10 mm. AR = 40:1
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SU-8 400µm thick. The fence thickness is 4 µm. AR = 100:1; Tilt 45 deg.
8µm diameter pilars in 480µm thick SU-8; tilt 60 deg.; AR = 60:1.
Diameter of the basement of the pillar is 9µm. Diameter at the top is 8µm.
Roughness of the pillar walls looks less than 0.2µm, and walls verticality is almost perfect.
