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Last modified: 2010-10-18

Beamline I311 - Short information

Beamline I311 is an undulator based VUV, soft X-ray beamline with two end-stations. One is aimed at high resolution X-ray Photoemission Spectroscopy (XPS) and X-ray Absorption Spectroscopy (XAS) on clean and adsorbate covered surfaces. The second station is equiped with a SPELEEM instrument for photoemission electron microscopy (LEEM, PEEM, XPEEM).

Contact persons:

Jesper AndersenSynchrotron Radiation Research, Lund University
Karina Schulte (Spectroscopy), MAX-lab, Lund University
Alexei Zakharov(SPLEEM), MAX-lab, Lund University

References:

R. Nyholm, J.N. Andersen, U. Johansson, B.N. Jensen and I. Lindau, Beamline I311 at MAX-lab: A VUV/Soft X-Ray Undulator Beamline for High Resolution Electron Spectroscopy, Nucl. Instr. and Meth. in Phys. Res. A 467-468, 520, 2001.

Technical data:

Source Undulator, period = 54,4 mm, 48,5 periods.
Pre-focusing optics Horizontally focusing spherical mirror.
Monochromator Modified SX-700 with 1220 l/mm grating, spherical focusing mirror and movable exit slit. This allows a high flexibility concerning the interplay between photon flux, resolving power and higher order suppression.
Energy range 43 - ~1500 eV
Energy resolution E/dE = 5x103 - 2x104. Some energy resolution tests.
Re-focusing optics K-B mounted mirrors.
Photon flux on sample 1011 - 1013 ph/s.
Experimental stations The first station is used for high resolution XPS and XAS. It consists of separate analyzer and preparation chambers accessible via a long-travel manipulator. The preparation chamber includes the usual equipment for preparation and characterization of surfaces (ion sputtering gun, LEED optics etc.). A hemispherical electron energy analyzer (SCIENTA SES200) is used for photoelectron spectroscopy.

The second station is equiped with a SPELEEM instrument for photoemission electron microscopy. This microscope has a spatial resolution better than 10 nm in the LEEM mode and 30 nm in the PEEM mode. It can also perform energy filtered XPEEM with a bandwidth of 300 meV in imaging mode, achieving a lateral resolution of 30 nm.